| PART |
Description |
Maker |
| 2SC2290 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)
|
Toshiba Semiconductor
|
| 2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| 2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| SA12A-T SA20CA-T SA10CA-T SA15CA-T SA7V0CA |
TVS UNI-DIR 12V 500W DO-15 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS BI-DIR 20V 500W DO-15 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS BI-DIR 10V 500W DO-15 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS BI-DIR 15V 500W DO-15 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
500W TRANSIENT VOLTAGE SUPPRESSOR
|
Diodes, Inc.
Diodes Incorporated
|
| 15KPA200 15KPA240A 15KPA24C 15KPA22A 15KPA26 15KPA |
Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 240V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 22V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 Tape and Ammo
|
New Jersey Semiconductor
|
| M57762 |
1240-1300MHz, 12.5V, 18W, SSB MOBILE RADIO
1240-1300MHz 12.5V 18W SSB MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NTE325 |
Silicon NPN RF Power Transistor 50W @ 30MHz
|
NTE[NTE Electronics]
|
| 1N6275 1N6281 1N6274A 1N6292 1N6271A 1N6289 1N6269 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 21.8V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 60.7V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.55V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 6.63V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 7.37V 1.5KW 2-Pin Case 1
Diode TVS Single Bi-Dir 7.37V 1.5KW 2-Pin Case 1.5KE
|
New Jersey Semiconductor
|
| NTE471 |
Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| RD06HHF111 |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
|
Mitsubishi Electric Semiconductor
|
| RD70HHF1 |
Silicon MOSFET Power Transistor 30MHz, 70W
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
